RTP Pockels Cell

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Description

Parameters

RTP Pockels cell
RTP Pockels cell is built using two RTP elements in a temperature compensating design. The unique properties of RTP, including high electrical resistivity(~10¹¹-10¹²W·cm) and a high damage threshold, result in a pockels cell with excellent properties. These Q-switches have been tested at 100kHz, with no sign of piezoelectric ringing.

Advantages:
High Damage Threshold
No Piezoelectric Ringing
Low Insertion Loss
Thermal Compensating Design
Non-hygroscopic
High Extinction and Contrast Ratio
Spectral range 500-3000 nm

Specifications:
Transmission at 1064 nm: > 98.5%
Static Half Wave Voltage at 1064 nm:
4x4x20 mm: 1,600 V
6x6x20 mm: 2,400 V
9x9x20 mm: 3,600 V
Contrast Ratio: > 20 dB @ 633 nm
Aperture: from 2x2 mm² up to 15x15 mm²
AR coating: R < 0.1% @ 1064 nm
Damage Threshold: > 600 MW/cm² @ 1064 nm, 10 ns pulse

Keyword:

RTP pockels cell

RTP Q switch

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